Behzad Razavi received the B.B.Sc.degree in electrical engineering from Sharif University of Technology in 1985 and the M.Sc. and Ph.D.degrees in electrical engineering from Stanford University in 1998 and 1992,respectively.He was with AT&T Bell Laboratories and subsequently Hewlett-Packard Laboratories until 1996.
About the Author
Preface
Acknowledgments
1 Introduction to Analog Design
1.1 Why Analog?
1.2 Why Inegrated?
1.3 Why CMOS?
1.4 Why This Book?
1.5 General Concepts
2 Basic MOS Device Physics
2.1 General Considerations
2.2 MOS I/V Characteristics
2.3 Second-Order Effects
2.4 MOS Device Model
3 Single-Stage Amplifiers
3.1 Basic Concepts
3.2 Common-Source Stage
3.3 Source Follower
3.4 Common-Gate Stage
3.5 Cascode Stage
3.6 Choice of Device Models
4 Differential Amplifiers
……
5 Passive and Active Current Mirrors
6 Frequency Response of Amplifiers
7 Noise
8 Feedback
9 Operational Amplifiers
10 Stability and Frequency Compensation
11 Bandgap References
12 Introduction to Switched-Capacitor Circuits
13 Nonlinearity and Mismatch
14 Oscillators
15 Phase-Locked Loops
Appendix A Short-Channel Effects and Device Models
Appendix B CMOS Processing Technology
Appendix C Layout and Packaging
Index
序言
模拟集成电路设计一直在集成电路的设计中占据着极其重要的位置。由于宏观信号从本质上来讲都是模拟信号,因此从现实世界获取信号、进行放大和处理并最终返回现实世界实现驱动都离不开模拟集成电路。模拟集成电路不仅在许多领域起着数字电路所不能取代的作用,而且在许多具体实现中还胜过数字电路。近年来,随着MOS器件尺寸的持续缩小和CMOS集成电路的飞速发展,当代集成电路的设计和生产已经达到了特大规模(ULSI)乃至吉规模(GSI)的水平,片上系统(SoC)不仅成为人们追求的目标,而且正在成为现实。可以毫不夸张地说,没有CMOS技术的发展就没有现代数字集成电路的辉煌,同样可以毫不夸张地说,没有CMOS模。
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